Role of oxygen in wetting of copper nanoparticles on silicon surfaces at elevated temperature

• Tapas Ghosh and
• Biswarup Satpati

Beilstein J. Nanotechnol. 2017, 8, 425–433, doi:10.3762/bjnano.8.45

• Tapas Ghosh Biswarup Satpati Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, HBNI, 1/AF Bidhannagar, Kolkata-700064, India 10.3762/bjnano.8.45 Abstract Copper nanoparticles have been deposited on silicon surfaces by a simple galvanic displacement reaction, and

• . Keywords: copper; cupric oxide; electron diffraction; galvanic displacement reaction; oxidation; surface wetting; transmission electron microscopy; Introduction The transition metal oxide cupric oxide (CuO) is a stable oxide of copper, and due to its diverse applications, immense research on CuO

• synthesized following different processes such as hydrothermal, chemical precipitation, electrochemical as well as other methods [4][5][6][7][13]. In this context the combination of the galvanic displacement reaction and the rapid thermal annealing process provides a simple and quick route for the synthesis